c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . K2611SB K2611SB K2611SB K2611SB rev.a oct .2010 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features 9a,900v, r ds(on) (max1.35 ? )@v gs =10v ultra-low gate charge(typical 58nc) fast switching capability 100%avalanche tested maximum junction temperature range(150 ) general description this n-channel enhancement mode power field effect transistors are produced using winsemi's proprietary, planar stripe ,dmos technology. this advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switch mode power supplies. absolute maximum ratings symbol parameter value units v dss drain source voltage 900 v i d continuous drain current(@tc=25 ) 9 a continuous drain current(@tc=100 ) 5.7 a i dm drain current pulsed (note1) 27 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note2) 663 mj e ar repetitive avalanche energy (note1) 15 mj dv/dt peak diode recovery dv /dt (note3) 4.5 v/ ns p d total power dissipation(@tc=25 ) 276 w derating factor above 25 2.22 w/ t j ,t stg junction and storage temperature -55~150 t l channel temperature 300 thermal characteristics symbol parameter value units min typ max r qjc thermal resistance , junction -to -case - - 0.45 /w r qja thermal resistance , junction-to -ambient - - 40 /w
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance K2611SB K2611SB K2611SB K2611SB 2 / 7 electrical characteristics(tc=25 ) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 30v,v ds =0v - - 10 na gate-source breakdown voltage v (br)gss i g = 10 a,v ds =0v 30 - - v drain cut -off current i dss v ds = 720 v,v gs =0v - - 100 a drain -source breakdown voltage v (br)dss i d = 10m a,v gs =0v 900 - - v gate threshold voltage v gs(th) v ds =10v,i d = 1m a 3 - 5 v drain -source on resistance r ds(on) v gs =10v,i d = 4.5 a - 1.1 1.35 ? forward transconductance gfs v ds = 15 v,i d = 4.5 a 3.0 7.0 - s input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 2040 - pf reverse transfer capacitance c rss - 45 - output capacitance c oss - 190 - switching time rise time tr v dd = 400 v, i d = 9 a r g = 100 ? (note4,5) - 25 - ns turn-on time ton - 60 - fall time tf - 20 - turn-off time toff - 95 - total gate charge(gate-source plus gate-drain) qg v dd =4 00 v, v gs =10v, i d = 9 a (note 4 ,5) - 58 - nc gate-source charge qgs - 32 - gate-drain("miller") charge qgd - 26 - source-drain ratings and characteristics(ta=25 ) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 9 a pulse drain reverse current i drp - - - 27 a forward voltage(diode) v dsf i dr = 9 a,v gs =0v - - 1.4 v reverse recovery time trr i dr = 9 a,v gs =0v, di dr / dt =100 a / s - 1.6 - ns reverse recovery charge qrr - 20 - c note 1.repeativity rating :pulse width limited by junction temperature 2.l= 15m h i as = 9 a,v dd = 90 v,r g = 25 ? ,starting t j =25 3.i sd 9 a,di/dt 2 00a/us,v dd < bv dss ,starting t j =25 4.pulse test:pulse width 300us,duty cycle 2% 5. essentially independent of operating temperature. this transistor is an electrostatic sensitive device please handle with caution
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance K2611SB K2611SB K2611SB K2611SB 3 / 7 fig.1 on state characteristics fig.2 transfer current characteristics fig.3 on-resistance variation vs drain current fig.4 body diode forward voltage variation with source current and temperature fig.5 capacitance characteristics fig.6 gate charge characteristics
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance K2611SB K2611SB K2611SB K2611SB 4 / 7 fig. 9 maximum safe operation area fig. 10 maximum drain current vs case temperature fig. 11 transient thermal response curve fig.7 breakdown voltage variation fig.8 on-resistance variation vs.temperature
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance K2611SB K2611SB K2611SB K2611SB 5 / 7 fig.1 2 gate test circuit & waveform fig.1 3 resistive switching test circuit & waveform fig.1 4 unclamped inductive switching test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance K2611SB K2611SB K2611SB K2611SB 6 / 7 fig.1 5 peak diode recovery dv/dt test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance K2611SB K2611SB K2611SB K2611SB 7 / 7 to- to- to- to- 3pb 3pb 3pb 3pb package package package package dimension dimension dimension dimension 0 unit:mm
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